Wolfspeed C3M0065100K N-channel SiC MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247

Description

Maximum Continuous Drain Current: 35 A

Transistor Material: SiC

Width: 5.21mm

Maximum Drain Source Voltage: 1000 V

Maximum Gate Threshold Voltage: 3.5V

Package Type: TO-247-4

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 1.8V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 35 nC @ 15 V, 35 nC @ 4 V

Channel Type: N

Length: 16.13mm

Pin Count: 4 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 113.5 W Series: C3M Maximum Gate Source Voltage: -8 V, +19 V Height: 23.6mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 4.8V Maximum Drain Source Resistance: 90 mΩ

This is N-channel SiC MOSFET 35 A 1000 V C3M 4-Pin TO-247 manufactured by Wolfspeed. The manufacturer part number is C3M0065100K. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 5.21mm wide. It has a maximum of 1000 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-247-4. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 35 nc @ 15 v, 35 nc @ 4 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 113.5 w maximum power dissipation. The product c3m, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +19 v. In addition, the height is 23.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 4.8v . It provides up to 90 mω maximum drain source resistance.