STMicroelectronics STP80NF10FP

Description

Maximum Continuous Drain Current: 80 A

Transistor Material: Si

Width: 4.6mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 4V

Package Type: TO-220FP

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 135 nC @ 10 V

Channel Type: N

Length: 10.4mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 45 W Series: STripFET II Maximum Gate Source Voltage: -20 V, +20 V Height: 9.3mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 15 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-220-3 Full Pack Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V title: STP80NF10FP Vgs(th) (Max) @ Id: 4V @ 250µA REACH Status: REACH Unaffected edacadModel: STP80NF10FP Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/1039562 Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 45W (Tc) standardLeadTime: 26 Weeks Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Mounting Type: Through Hole Series: STripFET™ II Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Supplier Device Package: TO-220FP Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 38A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STP80 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STP80NF10FP. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 135 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 45 w maximum power dissipation. The product stripfet ii, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 15 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 15mohm @ 40a, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 45w (tc). It has a long 26 weeks standard lead time. The product’s input capacitance at maximum includes 4300 pf @ 25 v. The product stripfet™ ii, is a highly preferred choice for users. The maximum gate charge and given voltages include 189 nc @ 10 v. to-220fp is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 38a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp80, a base product number of the product. The product is designated with the ear99 code number.