Description
Maximum Continuous Drain Current: 20 A
Width: 5.22mm
Transistor Configuration: Single
Maximum Drain Source Voltage: 600 V
Maximum Gate Threshold Voltage: 5V
Package Type: TO-247
Number of Elements per Chip: 1
Minimum Gate Threshold Voltage: 3V
Maximum Operating Temperature: 150 °C
Typical Gate Charge @ Vgs: 40 nC @ 10 V
Channel Type: N
Length: 16.24mm
Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 231 W Series: R6020KNZ4 Maximum Gate Source Voltage: ±30 V Height: 21.25mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 190 mΩ
This is Standard MOSFETs manufactured by ROHM. The manufacturer part number is R6020KNZ4C13. While 20 a of maximum continuous drain current. Furthermore, the product is 5.22mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of 150 °c. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.24mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 231 w maximum power dissipation. The product r6020knz4, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 21.25mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 190 mω maximum drain source resistance.
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