Renesas NP110N055PUG-E1-AY N-channel MOSFET, 110 A, 55 V, 3-Pin TO-263

Description

Category: Power MOSFET

Dimensions: 10 x 9.15 x 4.45mm

Maximum Continuous Drain Current: 110 A

Transistor Material: Si

Width: 9.15mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 55 V

Maximum Gate Threshold Voltage: 4V

Package Type: TO-263

Number of Elements per Chip: 1

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 251 nC @ 10 V

Channel Type: N Typical Input Capacitance @ Vds: 17100 pF @ 25 V Length: 10mm Pin Count: 3 Typical Turn-Off Delay Time: 131 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 1.8 W Maximum Gate Source Voltage: ±20 V Height: 4.45mm Typical Turn-On Delay Time: 63 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 2 mΩ