IXYS IXFN200N10P

Description

Maximum Continuous Drain Current: 200 A

Width: 25.07mm

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 5V

Package Type: SOT-227

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 235 nC @ 10 V

Channel Type: N

Length: 38.23mm

Pin Count: 4

Channel Mode: Enhancement Mounting Type: Screw Mount Maximum Power Dissipation: 680 W Series: Polar HiPerFET Maximum Gate Source Voltage: -20 V, +20 V Height: 9.6mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.5V Maximum Drain Source Resistance: 7.5 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 5V @ 8mA Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: SOT-227-4, miniBLOC Rds On (Max) @ Id, Vgs: 7.5mOhm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10VPackage: Tube Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 680W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V standardLeadTime: 43 Weeks Mounting Type: Chassis Mount Series: HiPerFET™, Polar Supplier Device Package: SOT-227B Current – Continuous Drain (Id) @ 25°C: 200A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: IXFN200 ECCN: EAR99

This ismanufactured by IXYS. The manufacturer part number is IXFN200N10P. While 200 a of maximum continuous drain current. Furthermore, the product is 25.07mm wide. It has a maximum of 100 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of sot-227. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 235 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 38.23mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in screw mount configuration. Provides up to 680 w maximum power dissipation. The product polar hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 7.5 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 8ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-227-4, minibloc. It has a maximum Rds On and voltage of 7.5mohm @ 500ma, 10v. The maximum gate charge and given voltages include 235 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 680w (tc). The product’s input capacitance at maximum includes 7600 pf @ 25 v. It has a long 43 weeks standard lead time. The product is available in chassis mount configuration. The product hiperfet™, polar, is a highly preferred choice for users. sot-227b is the supplier device package value. The continuous current drain at 25°C is 200a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfn200, a base product number of the product. The product is designated with the ear99 code number.