Infineon IPW65R080CFDAFKSA1 N-channel MOSFET, 43 A, 700 V CoolMOS CFD, 3-Pin TO-247

Description

Maximum Continuous Drain Current: 43 A

Transistor Material: Si

Width: 5.21mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 700 V

Package Type: TO-247

Number of Elements per Chip: 1

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 167 nC @ 10 V

Channel Type: N

Length: 16.13mm

Pin Count: 3

Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 391 W Series: CoolMOS™ CFD Maximum Gate Source Voltage: -30 V, +30 V Height: 21.1mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 0.9V Maximum Drain Source Resistance: 80 mΩ

This is N-channel MOSFET 43 A 700 V CoolMOS CFD 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW65R080CFDAFKSA1. While 43 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 700 v drain source voltage. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 167 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 391 w maximum power dissipation. The product coolmos™ cfd, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v . It provides up to 80 mω maximum drain source resistance.